2SD1815 NPN Epitaxial Planar Silicon Transistors

GME

Description

Production specification NPN Epitaxial Planar Silicon Transistors .

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Datasheet Specifications

Part number: 2SD1815
Manufacturer: GME
File Size: 217.24 KB
Datasheet: 2SD1815-GME.pdf
Description: NPN Epitaxial Planar Silicon Transistors

Features

* Adoption of FBET,MBIT processes. Pb
* Large current capacity and wide ASO. Lead-free
* Low collector-to-emitter saturation voltage.
* Excllent linearity of hFE.
* High fT.

Applications

* Relay drivers,high-speed inverters, Converters,and other high-current Switching applications. TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Volage 120 V VCEO Collector-Emitter Voltage 10

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2SD1815 NPN Epitaxial Planar Silicon Transistors GME

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