Datasheet Details
- Part number
- 2SD1815
- Manufacturer
- GME
- File Size
- 217.24 KB
- Datasheet
- 2SD1815-GME.pdf
- Description
- NPN Epitaxial Planar Silicon Transistors
2SD1815 Description
Production specification NPN Epitaxial Planar Silicon Transistors .
2SD1815 Features
* Adoption of FBET,MBIT processes. Pb
* Large current capacity and wide ASO. Lead-free
* Low collector-to-emitter saturation voltage.
* Excllent linearity of hFE.
* High fT.
2SD1815 Applications
* Relay drivers,high-speed inverters, Converters,and other high-current Switching applications. TO-251
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Volage
120 V
VCEO
Collector-Emitter Voltage
10
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