G2012 - N-Channel Enhancement Mode Power MOSFET
G2012 Features
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (at VGS = 2.5V)
* 100% Avalanche Tested
* RoHS Compliant 20V 12A < 12mΩ < 18mΩ Application
* Power switch
* DC/DC converters Schematic diagram Marking and pin assignment Device G2012 Package DFN2
