G2012 Datasheet, Mosfet, GOFORD

G2012 Features

  • Mosfet
  • VDS
  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V)
  • RDS(ON) (at VGS = 2.5V)
  • 100% Avalanche Tested
  • RoHS Compliant 20V 12A < 12mΩ <

PDF File Details

Part number:

G2012

Manufacturer:

GOFORD

File Size:

758.40kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applic

Datasheet Preview: G2012 📥 Download PDF (758.40kb)
Page 2 of G2012 Page 3 of G2012

G2012 Application

  • Applications General Features
  • VDS
  • ID (at VGS = 10V)
  • RDS(ON) (at VGS = 4.5V)
  • RDS(ON) (at VGS = 2.5V)

TAGS

G2012
N-Channel
Enhancement
Mode
Power
MOSFET
GOFORD

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Stock and price

Goford Semiconductor
N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
DigiKey
G2012
2944 In Stock
Qty : 1000 units
Unit Price : $0.18
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