Datasheet Details
- Part number
- G2012
- Manufacturer
- GOFORD
- File Size
- 758.40 KB
- Datasheet
- G2012-GOFORD.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
G2012 Description
GOFORD G2012 N-Channel Enhancement Mode Power MOSFET .
The G2012 uses advanced trench technology to provide
excellent RDS(ON) , low gate charge.
G2012 Features
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (at VGS = 2.5V)
* 100% Avalanche Tested
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