G2012 Datasheet - GOFORD

G2012 N-Channel Enhancement Mode Power MOSFET

G2012 Features

* VDS

* ID (at VGS = 10V)

* RDS(ON) (at VGS = 4.5V)

* RDS(ON) (at VGS = 2.5V)

* 100% Avalanche Tested

* RoHS Compliant 20V 12A < 12mΩ < 18mΩ Application

* Power switch

* DC/DC converters Schematic diagram Marking and pin assignment Device G2012 Package DFN2

Datasheet Details

G2012

GOFORD

758.40 KB

N-channel enhancement mode power mosfet.

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G2012 G2012 N-Channel Enhancement Mode Power MOSFET GOFORD

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