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G2012 - N-Channel Enhancement Mode Power MOSFET

G2012 Description

GOFORD G2012 N-Channel Enhancement Mode Power MOSFET .
The G2012 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

G2012 Features

* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 4.5V)
* RDS(ON) (at VGS = 2.5V)
* 100% Avalanche Tested

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Datasheet Details

Part number
G2012
Manufacturer
GOFORD
File Size
758.40 KB
Datasheet
G2012-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET GOFORD
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