Part number:
G2003A
Manufacturer:
GOFORD
File Size:
1.23 MB
Description:
N-channel enhancement mode power mosfet.
* VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation
* RoHS Compliant Schematic Diagram
G2003A
GOFORD
1.23 MB
N-channel enhancement mode power mosfet.
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