Datasheet Details
- Part number
- G2003A
- Manufacturer
- GOFORD
- File Size
- 1.23 MB
- Datasheet
- G2003A-GOFORD.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
G2003A Description
GOFORD G2003A .
The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
G2003A Features
* VDS = 190V,ID =3A
RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V
(Typ:430mΩ) (Typ:440mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation
* RoHS Compliant
Schematic Diagram
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