G2003A Datasheet, Mosfet, GOFORD

G2003A Features

  • Mosfet
  • VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ)
  • High density cell design for ultra low Rdson
  • Fully charact

PDF File Details

Part number:

G2003A

Manufacturer:

GOFORD

File Size:

1.23MB

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The G2003A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide var

Datasheet Preview: G2003A 📥 Download PDF (1.23MB)
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G2003A Application

  • Applications General Features
  • VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ)

TAGS

G2003A
N-Channel
Enhancement
Mode
Power
MOSFET
GOFORD

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Stock and price

Goford Semiconductor
N190V, 3A,RD<540M@10V,VTH1.0V~3.
DigiKey
G2003A
2988 In Stock
Qty : 1000 units
Unit Price : $0.13
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