G2003A - N-Channel Enhancement Mode Power MOSFET
G2003A Features
* VDS = 190V,ID =3A RDS(ON) < 540mΩ @ VGS=10V RDS(ON) < 560mΩ @ VGS=10V (Typ:430mΩ) (Typ:440mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Excellent package for good heat dissipation
* RoHS Compliant Schematic Diagram
