Part number:
GT52N10
Manufacturer:
GOFORD
File Size:
866.21 KB
Description:
N-channel enhancement mode power mosfet.
* VDS
* ID (at VGS = 10V)
* RDS(ON) (at VGS = 10V) 100V 71A < 7.5mΩ
* RDS(ON) (at VGS = 4.5V) < 10mΩ
* 100% Avalanche Tested
* RoHS Compliant Application
* Power switch
* DC/DC converters
* Synchronous Rectification Schematic diagram GT52N10 Marking and pin
GT52N10
GOFORD
866.21 KB
N-channel enhancement mode power mosfet.
📁 Related Datasheet
GT52N10 TO-220 N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT52N10D5 N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT52N10T N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT50G102 Insulated Gate Bipolar Transistor (ETC)
GT50G321 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J101 TRANSISTOR IGBT (Toshiba)
GT50J102 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J121 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J122 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J123 Silicon N-Channel IGBT (Toshiba)