Datasheet4U Logo Datasheet4U.com

GT52N10, GT52N10D5 - N-Channel Enhancement Mode Power MOSFET

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: GT52N10, GT52N10D5. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number GT52N10, GT52N10D5
Manufacturer GOFORD
File Size 866.21 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet GT52N10D5-GOFORD.pdf
Note This datasheet PDF includes multiple part numbers: GT52N10, GT52N10D5.
Please refer to the document for exact specifications by model.

GT52N10 Product details

Description

The GT52N10D5 uses advanced trench technology to provide excellent RDS(ON) , low gate charge.It can be used in a wide variety of applications.General

Features

📁 GT52N10 Similar Datasheet

  • GT50G102 - Insulated Gate Bipolar Transistor (ETC)
  • GT50G321 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J101 - TRANSISTOR IGBT (Toshiba)
  • GT50J102 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J121 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J122 - silicon N-channel IGBT (Toshiba Semiconductor)
  • GT50J123 - Silicon N-Channel IGBT (Toshiba)
  • GT50J301 - silicon N-channel IGBT (Toshiba Semiconductor)
Other Datasheets by GOFORD
Published: |