Part number:
GT52N10T
Manufacturer:
GOFORD
File Size:
0.96 MB
Description:
N-channel enhancement mode power mosfet.
* l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 100V 70A < 9mΩ < 15mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power switch l DC/DC converters TO-220 Ordering Information Device GT52N10T Package TO-220 Marking GT52N10 Absolute M
GT52N10T
GOFORD
0.96 MB
N-channel enhancement mode power mosfet.
📁 Related Datasheet
GT52N10 N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT52N10 TO-220 N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT52N10D5 N-Channel Enhancement Mode Power MOSFET (GOFORD)
GT50G102 Insulated Gate Bipolar Transistor (ETC)
GT50G321 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J101 TRANSISTOR IGBT (Toshiba)
GT50J102 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J121 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J122 silicon N-channel IGBT (Toshiba Semiconductor)
GT50J123 Silicon N-Channel IGBT (Toshiba)
