Description
Main Product Characteristics V(BR)DSS 60V SSF6910 60V N-Channel MOSFET D D RDS(on) ID 60mΩ 6.8A .
The SSF6910 utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* S D G
SOT-223
G
S Schematic Diagram
* Advanced MOSFET process technology
* Ideal for motor drive, power tools and LED lighting
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous (TC=25°C) Drain Current-Continuous (TC=100°C)
Symbol VDS VGS
ID
Max. 60 ±20 6.8 4.3
Drain Current-Pulsed1 Single Pulse Avalanche Energy2 Single Pulse Avalan