Description
Main Product Characteristics V(BR)DSS -60V D RDS(ON) ID 190mΩ -2A S G .
The SSF6911S utilizes the latest techniques to achieve high cell density and low on-resistance.
Features
* Advanced MOSFET process technology
* Ideal for motor drive, power tools and LED lighting
* Low on-resistance with low gate charge
Applications
* Absolute Maximum Ratings (TC=25°C unless otherwise specified)
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous (TC=25°C) Drain Current
* Continuous (TC=100°C) Drain Current
* Pulsed1
Power Dissipation (TC=25°C) Power Dissipation
* Derat