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G2R1000MT17J - Silicon Carbide MOSFET

G2R1000MT17J Description

G2R1000MT17J 1700 V 1000 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

G2R1000MT17J Features

* G2R™ Technology
* Softer RDS(ON) v/s Temperature Dependency
* LoRing™ - Electromagnetically Optimized Design
* Smaller RG(INT) and Lower QG
* Low Device Capacitances (COSS, CRSS)
* Industry-Leading UIL & Short-Circuit Robustness
* Robust Body

G2R1000MT17J Applications

* Auxiliary Power Supply
* Solar Inverters (String and Central)
* Infrastructure Chargers
* Industrial Motors (AC Servos)
* General Purpose Inverters
* Pulsed Power
* Piezo Drivers
* Ion Beam Generators RoHS REACH Absolute Maximum Rat

📥 Download Datasheet

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Datasheet Details

Part number
G2R1000MT17J
Manufacturer
GeneSiC
File Size
1.21 MB
Datasheet
G2R1000MT17J-GeneSiC.pdf
Description
Silicon Carbide MOSFET

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Silicon Carbide MOSFET GeneSiC
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