* Bare Chip
* G2R™ Technology - +20 V / -5 V Gate Drive D
* Superior QG x RDS(ON) Figure of Merit
* Low Capacitances and Low Gate Charge
* Normally-Off Stable Operation up to 175°C
* Fast and Reliable Body Diode G
* High Avalanche and Short Circuit R
G2R300MT65-CAL Datasheet (641.65 KB)
G2R300MT65-CAL
GeneSiC
641.65 KB
Silicon carbide mosfet.
G2R300MT65-CAL
TM
6500 V 300 mΩ SiC MOSFET
Silicon Carbide MOSFET
N-Channel Enhancement Mode
VDS
=
RDS(ON)(Typ.) =
ID (TC = 115°C) =
6500 V 30.
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