G2R325MS65-CAL Silicon Carbide MOSFET

GeneSiC

Description

G2R325MS65-CAL TM 6500 V 325 mΩ SiC MOSFET Silicon Carbide MOSFET with Integrated Schottky Diode N-Channel Enhancement Mode VDS = RDS(ON)(Typ.) .

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Datasheet Specifications

Part number: G2R325MS65-CAL
Manufacturer: GeneSiC
File Size: 642.21 KB
Datasheet: G2R325MS65-CAL-GeneSiC.pdf
Description: Silicon Carbide MOSFET

Features

* Bare Chip
* G2R™ Technology - +20 V / -5 V Gate Drive D
* Superior QG x RDS(ON) Figure of Merit
* Low Capacitances and Low Gate Charge
* Normally-Off Stable Operation up to 175°C
* Fast and Reliable Integrated Schottky Diode G
* High Avalanche and

Applications

* High Voltage Converters
* Smart Grid and HVDC
* Traction
* Pulsed Power EN M Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) SA Parameter Symbol Conditions Values Drain-Source Voltage VDS(max) VGS = 0 V, ID = 100 µA 6500 Gate-Source Voltage

G2R325MS65-CAL Distributors

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Silicon Carbide MOSFET GeneSiC

GeneSiC G2R325MS65-CAL-like datasheet