* Bare Chip
* G2R™ Technology - +20 V / -5 V Gate Drive D
* Superior QG x RDS(ON) Figure of Merit
* Low Capacitances and Low Gate Charge
* Normally-Off Stable Operation up to 175°C
* Fast and Reliable Integrated Schottky Diode G
* High Avalanche and
G2R325MS65-CAL Datasheet (642.21 KB)
G2R325MS65-CAL
GeneSiC
642.21 KB
Silicon carbide mosfet.
G2R325MS65-CAL
TM
6500 V 325 mΩ SiC MOSFET
Silicon Carbide MOSFET with Integrated Schottky Diode
N-Channel Enhancement Mode
VDS
=
RDS(ON)(Typ.) .
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