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G2R325MS65-CAL - Silicon Carbide MOSFET

G2R325MS65-CAL Description

G2R325MS65-CAL TM 6500 V 325 mΩ SiC MOSFET Silicon Carbide MOSFET with Integrated Schottky Diode N-Channel Enhancement Mode VDS = RDS(ON)(Typ.) .

G2R325MS65-CAL Features

* Bare Chip
* G2R™ Technology - +20 V / -5 V Gate Drive D
* Superior QG x RDS(ON) Figure of Merit
* Low Capacitances and Low Gate Charge
* Normally-Off Stable Operation up to 175°C
* Fast and Reliable Integrated Schottky Diode G
* High Avalanche and

G2R325MS65-CAL Applications

* High Voltage Converters
* Smart Grid and HVDC
* Traction
* Pulsed Power EN M Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated) SA Parameter Symbol Conditions Values Drain-Source Voltage VDS(max) VGS = 0 V, ID = 100 µA 6500 Gate-Source Voltage

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Datasheet Details

Part number
G2R325MS65-CAL
Manufacturer
GeneSiC
File Size
642.21 KB
Datasheet
G2R325MS65-CAL-GeneSiC.pdf
Description
Silicon Carbide MOSFET

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Silicon Carbide MOSFET GeneSiC
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