Datasheet Details
- Part number
- G2R325MS65-CAL
- Manufacturer
- GeneSiC
- File Size
- 642.21 KB
- Datasheet
- G2R325MS65-CAL-GeneSiC.pdf
- Description
- Silicon Carbide MOSFET
G2R325MS65-CAL Description
G2R325MS65-CAL TM 6500 V 325 mΩ SiC MOSFET Silicon Carbide MOSFET with Integrated Schottky Diode N-Channel Enhancement Mode VDS = RDS(ON)(Typ.) .
G2R325MS65-CAL Features
* Bare Chip
* G2R™ Technology - +20 V / -5 V Gate Drive
D
* Superior QG x RDS(ON) Figure of Merit
* Low Capacitances and Low Gate Charge
* Normally-Off Stable Operation up to 175°C
* Fast and Reliable Integrated Schottky Diode
G
* High Avalanche and
G2R325MS65-CAL Applications
* High Voltage Converters
* Smart Grid and HVDC
* Traction
* Pulsed Power
EN M Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated)
SA Parameter
Symbol
Conditions
Values
Drain-Source Voltage
VDS(max)
VGS = 0 V, ID = 100 µA
6500
Gate-Source Voltage
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