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G2R1000MT33J - Silicon Carbide MOSFET

G2R1000MT33J Description

G2R1000MT33J 3300 V 1000 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

G2R1000MT33J Features

* Softer RDS(ON) v/s Temperature Dependency
* LoRing™ - Electromagnetically Optimized Design
* Smaller RG(INT) and Lower QG
* Low Device Capacitances (COSS, CRSS)
* Industry-Leading UIL & Short-Circuit Robustness
* Robust Body Diode with Low VF and Low

G2R1000MT33J Applications

* Auxiliary Power Supply
* 1500V Solar Inverter Systems
* Industrial Motors (AC Servos)
* General Purpose Inverters
* Pulsed Power
* Piezo Drivers
* Ion Beam Generators RoHS REACH Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated

📥 Download Datasheet

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Datasheet Details

Part number
G2R1000MT33J
Manufacturer
GeneSiC
File Size
1.34 MB
Datasheet
G2R1000MT33J-GeneSiC.pdf
Description
Silicon Carbide MOSFET

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Silicon Carbide MOSFET GeneSiC
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