G2R1000MT33J Silicon Carbide MOSFET

GeneSiC

Description

G2R1000MT33J 3300 V 1000 mΩ SiC MOSFET Silicon Carbide MOSFET N-Channel Enhancement Mode .

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Datasheet Specifications

Part number: G2R1000MT33J
Manufacturer: GeneSiC
File Size: 1.34 MB
Datasheet: G2R1000MT33J-GeneSiC.pdf
Description: Silicon Carbide MOSFET

Features

* Softer RDS(ON) v/s Temperature Dependency
* LoRing™ - Electromagnetically Optimized Design
* Smaller RG(INT) and Lower QG
* Low Device Capacitances (COSS, CRSS)
* Industry-Leading UIL & Short-Circuit Robustness
* Robust Body Diode with Low VF and Low

Applications

* Auxiliary Power Supply
* 1500V Solar Inverter Systems
* Industrial Motors (AC Servos)
* General Purpose Inverters
* Pulsed Power
* Piezo Drivers
* Ion Beam Generators RoHS REACH Absolute Maximum Ratings (At TC = 25°C Unless Otherwise Stated

G2R1000MT33J Distributors

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Silicon Carbide MOSFET GeneSiC

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