GAP05SLT80-CAL Datasheet - GeneSiC

Silicon Carbide Power Schottky Diode

* 8000 V Silicon Carbide Schottky rectifier

* 175 °C maximum operating temperature

* Positive temperature coefficient of VF

* Extremely fast switching speeds

* Superior figure of merit QC/IF Advantages

* Improved circuit efficiency (Lower overall cost)

* Low switching los

GAP05SLT80-CAL

GeneSiC

333.63 KB

Silicon carbide power schottky diode.

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GAP05SLT80-CAL Silicon Carbide Power Schottky Diode GeneSiC

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