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GAP3SHT33-CAU Silicon Carbide Power Schottky Diode

GAP3SHT33-CAU Description

Silicon Carbide Power Schottky Diode .

GAP3SHT33-CAU Features

* 3300 V Schottky rectifier
* 210 °C maximum operating temperature
* Positive temperature coefficient of VF
* Fast switching speeds
* Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAU VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages

GAP3SHT33-CAU Applications

* Down Hole Oil Drilling, Geothermal Instrumentation
* High Voltage Multipliers
* Military Power Supplies Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage Continuous forward current RMS forward current

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Datasheet Details

Part number
GAP3SHT33-CAU
Manufacturer
GeneSiC
File Size
215.36 KB
Datasheet
GAP3SHT33-CAU-GeneSiC.pdf
Description
Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode GeneSiC
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