Datasheet4U Logo Datasheet4U.com

GAP3SHT33-CAL Silicon Carbide Power Schottky Diode

GAP3SHT33-CAL Description

Silicon Carbide Power Schottky Diode .

GAP3SHT33-CAL Features

* 3300 V Schottky rectifier
* 210 °C maximum operating temperature
* Positive temperature coefficient of VF
* Fast switching speeds
* Superior figure of merit QC/IF Die Datasheet GAP3SHT33-CAL VRRM IF @ 25 oC QC = 3300 V = 0.3 A = 20 nC Advantages

GAP3SHT33-CAL Applications

* Down Hole Oil Drilling, Geothermal Instrumentation
* High Voltage Multipliers
* Military Power Supplies Maximum Ratings at Tj = 175 °C, unless otherwise specified Parameter Symbol Conditions Repetitive peak reverse voltage Continuous forward current RMS forward current

📥 Download Datasheet

Preview of GAP3SHT33-CAL PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
GAP3SHT33-CAL
Manufacturer
GeneSiC
File Size
214.79 KB
Datasheet
GAP3SHT33-CAL-GeneSiC.pdf
Description
Silicon Carbide Power Schottky Diode

📁 Related Datasheet

  • GAP-AAA-PCI-005 - 98pin PCI-Express Connector (LOTES)
  • GAP04N70 - Mini size of Discrete semiconductor elements (ETC)
  • GAP07N70 - Mini Size of Discrete Semiconductor Elements (Sinyork)

📌 All Tags

Silicon Carbide Power Schottky Diode GeneSiC
GeneSiC GAP3SHT33-CAL-like datasheet