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GAP3SLT33-214 Silicon Carbide Schottky Diode

GAP3SLT33-214 Description

GAP3SLT33-214 3300V 0.3A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode .

GAP3SLT33-214 Features

* Enhanced Surge and Avalanche Robustness
* Superior Figure of Merit QC/IF
* Low VF for High Temperature Operation
* Low Thermal Resistance
* Low Reverse Leakage Current
* Temperature Independent Fast Switching
* Positive Temperature Coefficien

GAP3SLT33-214 Applications

* Medical Imaging
* High Voltage Sensing
* Oil Drilling
* Geothermal Instrumentation
* High Voltage Multipliers
* High Frequency Rectifiers
* High Voltage Switching
* Pulsed Power Absolute Maximum Ratings (At TL = 25°C Unless Otherwise

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Datasheet Details

Part number
GAP3SLT33-214
Manufacturer
GeneSiC
File Size
403.76 KB
Datasheet
GAP3SLT33-214-GeneSiC.pdf
Description
Silicon Carbide Schottky Diode

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Silicon Carbide Schottky Diode GeneSiC
GeneSiC GAP3SLT33-214-like datasheet