GAP3SLT33-214 - Silicon Carbide Schottky Diode

GeneSiC

Datasheet Details

Part number	GAP3SLT33-214
Manufacturer	GeneSiC
File Size	403.76 KB
Description	Silicon Carbide Schottky Diode
Datasheet	GAP3SLT33-214-GeneSiC.pdf

Enhanced Surge and Avalanche Robustness.
Superior Figure of Merit QC/IF.
Low VF for High Temperature Operation.
Low Thermal Resistance.
Low Reverse Leakage Current.
Temperature Independent Fast Switching.
Positive Temperature Coefficient of VF.
High dV/dt Ruggedness Package DO-214 TM VRRM = IF (TL ≤ 125°C) = QC = 3300 V 0.3 A 14 nC K RoHS A REACH Advantages.
High System Reliability.
Optimal Pri.

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Published: Dec 20, 2024 |