GB05MPS17-247 Datasheet, diode equivalent, GeneSiC

GB05MPS17-247 Features

  • Diode
  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • Low Thermal Resistance
  • 175 °C Maximum

PDF File Details

Part number:

GB05MPS17-247

Manufacturer:

GeneSiC

File Size:

510.58kb

Download:

📄 Datasheet

Description:

Silicon carbide schottky diode.

Datasheet Preview: GB05MPS17-247 📥 Download PDF (510.58kb)
Page 2 of GB05MPS17-247 Page 3 of GB05MPS17-247

GB05MPS17-247 Application

  • Applications
  • Auxiliary Power Supplies
  • LED and HID Lighting
  • Solar Inverters
  • Motor Drives
  • Freewheeli

TAGS

GB05MPS17-247
Silicon
Carbide
Schottky
Diode
GeneSiC

📁 Related Datasheet

GB05MPS33-263 - Silicon Carbide Schottky Diode (GeneSiC)
GB05MPS33-263 3300V 5A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Enhanced Surge and Avalanche Robustness • Superior Figure of .

GB0502PFV1-8 - Motor Blower (SUNON)
96.01.12 96.01.12 96.01.12 96.01.12 96.01.12 96.01.12 96.01.12 96.01.12 96.01.12 .

GB05SLT12-252 - Silicon Carbide Schottky Diode (GeneSiC)
GB05SLT12-252 1200 V SiC MPS™ Diode Silicon Carbide Schottky Diode Features • High Avalanche (UIS) Capability • Enhanced Surge Current Capability • Su.

GB05XP120KTPBF - Three Phase Inverter Module (Vishay Siliconix)
.DataSheet.co.kr GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED® Diodes, 5 A FEATURE.

GB01SHT06-CAL - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB01SHT06-CAU - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  650 V Schottky rectifier  210 °C maximum operating temperature  Zero reverse reco.

GB01SHT12-CAL - High Temperature Silicon Carbide Power Schottky Diode (GeneSiC)
  High Temperature Silicon Carbide Power Schottky Diode Features  1200 V Schottky rectifier  210°C maximum operating temperature  Zero reverse reco.

GB01SLT06-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT06-214 650V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Ava.

GB01SLT12-214 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-214 1200V 1A SiC Schottky MPS™ Diode Silicon Carbide Schottky Diode Features • Low VF for High Temperature Operation • Enhanced Surge and Av.

GB01SLT12-220 - Silicon Carbide Schottky Diode (GeneSiC)
GB01SLT12-220 Silicon Carbide Power Schottky Diode Features •1200 V Schottky rectifier •175 °C maximum operating temperature •Zero reverse recover.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts