GSM2312P - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSM2312P Features
* 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching
* Suit for 1.8V Gate Drive Applications
* Green Device Available
* SOT-23 package design Applications
* Notebook
* Load Switch
* Hand-Held Instrumen
