GSM2312P Datasheet - Globaltech

GSM2312P N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM2312P Features

* 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Suit for 1.8V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Hand-Held Instrumen

GSM2312P Datasheet (569.07 KB)

GSM2312P Datasheet Preview — Preview of GSM2312P PDF

Datasheet Details

Part number:

GSM2312P

Manufacturer:

Globaltech

File Size:

569.07 KB

Description:

N-channel mosfet.

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