Datasheet4U Logo Datasheet4U.com

GSM2312P

N-Channel MOSFET

GSM2312P Features

* 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V

* Improved dv/dt capability

* Fast switching

* Suit for 1.8V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Hand-Held Instrumen

GSM2312P General Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM2312P Datasheet (569.07 KB)

Preview of GSM2312P PDF

Datasheet Details

Part number:

GSM2312P

Manufacturer:

Globaltech

File Size:

569.07 KB

Description:

N-channel mosfet.

📁 Related Datasheet

GSM2313P P-Channel MOSFET (Globaltech)

GSM2318A N-Channel MOSFET (Globaltech)

GSM2319P P-Channel MOSFET (Globaltech)

GSM2319Y P-Channel MOSFET (Globaltech)

GSM2302AS N-Channel MOSFET (Globaltech)

GSM2307P P-Channel MOSFET (Globaltech)

GSM2308AP N-Channel MOSFET (Globaltech)

GSM2309KP P-Channel MOSFET (Globaltech)

GSM2309S 20V P-Channel Enhancement Mode MOSFET (Globaltech)

GSM2320P N-Channel MOSFET (Globaltech)

TAGS

GSM2312P N-Channel MOSFET Globaltech

Image Gallery

GSM2312P Datasheet Preview Page 2 GSM2312P Datasheet Preview Page 3

GSM2312P Distributor