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GSM2312P - N-Channel MOSFET

GSM2312P Description

GSM2312P 20V N-Channel MOSFETs Product .
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

GSM2312P Features

* 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
* Improved dv/dt capability
* Fast switching

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Datasheet Details

Part number
GSM2312P
Manufacturer
Globaltech
File Size
569.07 KB
Datasheet
GSM2312P-Globaltech.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Globaltech
Globaltech GSM2312P-like datasheet

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