GSM2312P Datasheet, Mosfet, Globaltech

✔ GSM2312P Features

20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
Improved dv/dt capability
Fast switching
Suit for 1.8V Gate Drive Applications
Green Device Available
SOT-23 package design A

✔ GSM2312P Application

Features
20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V
Improved dv/dt capability
Fast switching
Suit for 1.8V G

PDF File Details

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Part number:

GSM2312P

Manufacturer:

Globaltech

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569.07kb

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📄 Datasheet

Description:

N-channel mosfet. These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

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GSM2312P N-Channel MOSFET Globaltech