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GSM2307P

P-Channel MOSFET

GSM2307P Features

* -20V, -6.5A, RDS(ON)=26mΩ@VGS=-4.5

* Improved dv/dt capability

* Fast switching

* Suit for -1.8V Gate Drive Applications

* Green Device Available

* SOT-23-6L package design Applications

* Notebook

* Load Switch

* Networking P

GSM2307P General Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM2307P Datasheet (539.35 KB)

Preview of GSM2307P PDF

Datasheet Details

Part number:

GSM2307P

Manufacturer:

Globaltech

File Size:

539.35 KB

Description:

P-channel mosfet.

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TAGS

GSM2307P P-Channel MOSFET Globaltech

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