GSM2308AP Datasheet - Globaltech

GSM2308AP N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM2308AP Features

* 60V, 6.1A, RDS(ON)=85mΩ@VGS=10V

* Improved dv/dt capability

* Fast switching

* 100% EAS guaranteed

* Green Device Available

* SOT-23 package design Applications

* Motor Drive

* Power Tools

* LED Lighting Packages & Pin Assign

GSM2308AP-Globaltech.pdf

GSM2308AP Datasheet Preview — Preview of GSM2308AP PDF

Datasheet Details

Part number:

GSM2308AP

Manufacturer:

Globaltech

File Size:

521.66 KB

Description:

N-channel mosfet.

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GSM2308AP GSM2308AP N-Channel MOSFET Globaltech

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