GSM2308AP - N-Channel MOSFET
These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSM2308AP Features
* 60V, 6.1A, RDS(ON)=85mΩ@VGS=10V
* Improved dv/dt capability
* Fast switching
* 100% EAS guaranteed
* Green Device Available
* SOT-23 package design Applications
* Motor Drive
* Power Tools
* LED Lighting Packages & Pin Assign
