GSM2302AS Datasheet - Globaltech

GSM2302AS N-Channel MOSFET

GSM2302AS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power los.

GSM2302AS Features

* 20V/2.4A,RDS(ON)=90mΩ@VGS=4.5V

* 20V/2.0A,RDS(ON)=110mΩ@VGS=2.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design Applications

* Portable Equipment

GSM2302AS-Globaltech.pdf