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GSM2309S - 20V P-Channel Enhancement Mode MOSFET

GSM2309S Description

GSM2309S 20V P-Channel Enhancement Mode MOSFET Product .
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

GSM2309S Features

* -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available

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Datasheet Details

Part number
GSM2309S
Manufacturer
Globaltech
File Size
481.50 KB
Datasheet
GSM2309S-Globaltech.pdf
Description
20V P-Channel Enhancement Mode MOSFET

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20V P-Channel Enhancement Mode MOSFET Globaltech
Globaltech GSM2309S-like datasheet

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