GSM2309S Datasheet, Mosfet, Globaltech

✔ GSM2309S Features

-20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V
Improved dv/dt capability
Fast switching
Green Device Available
Suit for -1.8V Gate Drive Applications Applications
Notebook

✔ GSM2309S Application

Features
-20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V
Improved dv/dt capability
Fast switching
Green Device A

PDF File Details

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Part number:

GSM2309S

Manufacturer:

Globaltech

File Size:

481.50kb

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📄 Datasheet

Description:

20v p-channel enhancement mode mosfet. These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been e

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GSM2309S 20V P-Channel Enhancement Mode MOSFET Globaltech