GSM2309S - 20V P-Channel Enhancement Mode MOSFET
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSM2309S Features
* -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Green Device Available
* Suit for -1.8V Gate Drive Applications Applications
* Notebook
* Load Switch
* Battery Protection
* Hand-held Instruments GSM2309S Packages & Pin Assignme
