GSM2309S Datasheet - Globaltech

GSM2309S 20V P-Channel Enhancement Mode MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM2309S Features

* -20V/-5.8A,RDS(ON)=33mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Green Device Available

* Suit for -1.8V Gate Drive Applications Applications

* Notebook

* Load Switch

* Battery Protection

* Hand-held Instruments GSM2309S Packages & Pin Assignme

GSM2309S Datasheet (481.50 KB)

GSM2309S Datasheet Preview — Preview of GSM2309S PDF

Datasheet Details

Part number:

GSM2309S

Manufacturer:

Globaltech

File Size:

481.50 KB

Description:

20v p-channel enhancement mode mosfet.

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