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GSM2309KP Datasheet - Globaltech

GSM2309KP - P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Thes

GSM2309KP Features

* -30V, -3.8A, RDS(ON)=75mΩ@VGS=-10V

* Fast switching

* Suit for -4.5V Gate Drive Applications

* G-S ESD Protection Diode Embedded

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Battery

GSM2309KP-Globaltech.pdf

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Datasheet Details

Part number:

GSM2309KP

Manufacturer:

Globaltech

File Size:

566.40 KB

Description:

P-channel mosfet.

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