GSM2313P Datasheet - Globaltech

GSM2313P P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM2313P Features

* -20V, -4.1A, RDS(ON)=65mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Suit for -1.8V Gate Drive Applications

* Green Device Available

* SOT-23 package design Applications

* Notebook

* Load Switch

* Hand-held Instr

GSM2313P Datasheet (585.09 KB)

GSM2313P Datasheet Preview — Preview of GSM2313P PDF

Datasheet Details

Part number:

GSM2313P

Manufacturer:

Globaltech

File Size:

585.09 KB

Description:

P-channel mosfet.

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