GSM2318A Datasheet - Globaltech

GSM2318A N-Channel MOSFET

GSM2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

GSM2318A Features

* 40V/2.6A,RDS(ON)=68mΩ@VGS=10V

* 40V/2.2A,RDS(ON)=88mΩ@VGS=4.5V

* Super high density cell design for extremely low RDS (ON)

* Exceptional on-resistance and maximum DC current capability

* SOT-23 package design Applications

* Portable Equipment

GSM2318A-Globaltech.pdf