GSM2318A - N-Channel MOSFET
GSM2318A, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss
GSM2318A Features
* 40V/2.6A,RDS(ON)=68mΩ@VGS=10V
* 40V/2.2A,RDS(ON)=88mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23 package design Applications
* Portable Equipment
