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GSM2319Y Datasheet - Globaltech

GSM2319Y P-Channel MOSFET

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Thes.

GSM2319Y Features

* -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V

* Improved dv/dt capability

* Fast switching

* Suit for -1.5V Gate Drive Applications

* Green Device Available

* SOT-523 package design Applications

* Notebook

* Load Switch

* Hand-Held In

GSM2319Y Datasheet (564.40 KB)

GSM2319Y Datasheet Preview — Preview of GSM2319Y PDF

Datasheet Details

Part number:

GSM2319Y

Manufacturer:

Globaltech

File Size:

564.40 KB

Description:

P-channel mosfet.

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GSM2319Y P-Channel MOSFET Globaltech

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