GSM2319Y - P-Channel MOSFET
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Thes
GSM2319Y Features
* -20V, -400mA, RDS(ON)=600mΩ@VGS=-4.5V
* Improved dv/dt capability
* Fast switching
* Suit for -1.5V Gate Drive Applications
* Green Device Available
* SOT-523 package design Applications
* Notebook
* Load Switch
* Hand-Held In
