HM20P02Q P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

P-Channel Enhancement Mode Power MOSFET HM20P02Q .
The HM20P02Q uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

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Datasheet Specifications

Part number: HM20P02Q
Manufacturer: H&M Semiconductor
File Size: 595.61 KB
Datasheet: HM20P02Q-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

Features

* VDS = -20V,ID = -20A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired

HM20P02Q Distributors

📁 Related Datasheet

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HM20P02Q P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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