Datasheet Details
- Part number
- HM2318
- Manufacturer
- H&M Semiconductor
- File Size
- 946.15 KB
- Datasheet
- HM2318-HMSemiconductor.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
HM2318 Description
+0 N-Channel 40V(D-S) MOSFET GENERAL .
The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
HM2318 Features
* RDS(ON) ≦40mΩ@VGS=10V
* RDS(ON) ≦65mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current
capability
HM2318 Applications
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
40 ±20
Unit V V
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