HM2318 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

+0 N-Channel 40V(D-S) MOSFET GENERAL .
The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: HM2318
Manufacturer: H&M Semiconductor
File Size: 946.15 KB
Datasheet: HM2318-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON) ≦40mΩ@VGS=10V
* RDS(ON) ≦65mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 40 ±20 Unit V V

HM2318 Distributors

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HM2301 HM2302 HM2309 HM236WU1-100 HM236WU1-300 HM236WU1-400

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HM2318 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2318-like datasheet