HM2318 Datasheet, Mosfet, H&M Semiconductor

HM2318 Features

  • Mosfet
  • RDS(ON) ≦40mΩ@VGS=10V
  • RDS(ON) ≦65mΩ@VGS=4.5V
  • Super high density cell design for extremely low RDS(ON)
  • Exceptional on-resistance and maximum DC cu

PDF File Details

Part number:

HM2318

Manufacturer:

H&M Semiconductor

File Size:

946.15kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench t

Datasheet Preview: HM2318 📥 Download PDF (946.15kb)
Page 2 of HM2318 Page 3 of HM2318

HM2318 Application

  • Applications
  • Power Management in Note book
  • Portable Equipment
  • Battery Powered System
  • Load Switch
  • D

TAGS

HM2318
N-Channel
Enhancement
Mode
Power
MOSFET
H&M Semiconductor

📁 Related Datasheet

HM2310 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2310 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

HM2310B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2310B N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced .

HM2310C - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM & N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced.

HM2310PR - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM2312 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2312 N-Channel Enhancement Mode Power MOSFET Description The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

HM2312B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2312B N-Channel Enhancement Mode Power MOSFET Description The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2314 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2314 N-Channel Enhancement Mode Power MOSFET Description The HM2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

HM2314B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2314B N-Channel Enhancement Mode Power MOSFET Description The HM2314B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2318A - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2318A N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM2318A is the N-Channel logic enhancement mode power field effect transistors are produced.

HM2318APR - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2318$35 N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM  $35 is the N-Channel logic enhancement mode power field effect transistors are pro.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts