HM2318APR N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

HM2318$35 N-Channel 40V(D-S) MOSFET GENERAL .
The HM$35 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

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Datasheet Specifications

Part number: HM2318APR
Manufacturer: H&M Semiconductor
File Size: 1.10 MB
Datasheet: HM2318APR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* RDS(ON) ≦28mΩ@VGS=10V
* RDS(ON) ≦38mΩ@VGS=4.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability

Applications

* Power Management in Note book
* Portable Equipment
* Battery Powered System
* Load Switch
* DSC Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS Maximum Ratings 40 ±20 Unit V V

HM2318APR Distributors

📁 Related Datasheet

HM2301 HM2302 HM2309 HM236WU1-100 HM236WU1-300 HM236WU1-400

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HM2318APR N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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