HM2318B Datasheet, Mosfet, H&M Semiconductor

PDF File Details

Part number:

HM2318B

Manufacturer:

H&M Semiconductor

File Size:

225.50kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. HM2318B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench techno

📁 Related Datasheet

HM2318 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
+0  N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM2318 is the N-Channel logic enhancement mode power field effect transistors are produc.

HM2318A - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2318A N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM2318A is the N-Channel logic enhancement mode power field effect transistors are produced.

HM2318APR - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2318$35 N-Channel 40V(D-S) MOSFET GENERAL DESCRIPTION The HM  $35 is the N-Channel logic enhancement mode power field effect transistors are pro.

HM2310 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2310 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2310 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

HM2310B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2310B N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced .

HM2310C - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM & N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced.

HM2310PR - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
M Description The HM2310PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM2312 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2312 N-Channel Enhancement Mode Power MOSFET Description The HM2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

HM2312B - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2312B N-Channel Enhancement Mode Power MOSFET Description The HM2312B uses advanced trench technology to provide excellent RDS(ON), low gate charge.

HM2314 - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
HM2314 N-Channel Enhancement Mode Power MOSFET Description The HM2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge a.

TAGS

HM2318B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor