HM2N20

N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Part number:

HM2N20

Manufacturer:

H&M Semiconductor

File Size:

401.47 KB

Description:

N-channel enhancement mode power mosfet.
N-Channel Enhancement Mode Power MOSFET Description The +01 uses advanced trench technology and d.
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate cha.

✔ HM2N20 Features

VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent p

✔ HM2N20 Application

General Features
VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
High density cell design for u

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HM2N20 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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✔ HM2N20 Features

✔ HM2N20 Application

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