Datasheet4U.com

HM2N20 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

📥 Download Datasheet

HM2N20 Datasheet Preview — Preview of HM2N20 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	HM2N20
Manufacturer	H&M Semiconductor
File Size	401.47 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2N20-HMSemiconductor.pdf

HM2N20 Product details

Description

The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

📁 HM2N20 Similar Datasheet

HM2007 - Speech recognition (HMC)
HM200WD1-100 - TFT LCD (BOE)
HM20N120AB - IGBT (H&M semi)
HM20N120T - IGBT (H&M semi)
HM20N120TB - IGBT (H&M semi)
HM20N50F - 500V N-Channel MOSFET (H&M semi)
HM20N60A - N-Channel MOSFET (H&M semi)
HM2126 - WHITE LED DRIVER (H&M semi)

Other Datasheets by H&M Semiconductor

HM2N20MR - 200V N-Channel Enhancement Mode MOSFET
HM2N20PR - N-Channel Enhancement Mode Power MOSFET
HM2N20R - N-Channel Enhancement Mode Power MOSFET
HM2N25MR - 250V N-Channel Enhancement Mode MOSFET
HM2N10 - N-Channel Enhancement Mode Power MOSFET
HM2N10B - N-Channel Enhancement Mode Power MOSFET

Published: Nov 27, 2018 |