HM2N20 N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Enhancement Mode Power MOSFET .
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: HM2N20
Manufacturer: H&M Semiconductor
File Size: 401.47 KB
Datasheet: HM2N20-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM2N20 Distributors

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HM2N20 N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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