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HM2N20PR - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM2N20PR
Manufacturer	H&M Semiconductor
File Size	444.91 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2N20PR-HMSemiconductor.pdf

HM2N20PR Product details

Description

The HM2N20PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 200V,ID =2A RDS(ON) < 580mΩ @ VGS=10V (Typ:520mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Excellent package for good heat dissipation.

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Published: Nov 27, 2018 |