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HM2N10 - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM2N10
Manufacturer	H&M Semiconductor
File Size	275.30 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2N10-HMSemiconductor.pdf

HM2N10 Product details

Description

The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS = 100V,ID = 2A RDS(ON).

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Published: Nov 27, 2018 |