HM2N15R N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

Description

N-Channel Enhancement Mode Power MOSFET .
The HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

📥 Download Datasheet

HM2N15R Datasheet Preview — Preview of HM2N15R PDF

Datasheet Specifications

Part number: HM2N15R
Manufacturer: H&M Semiconductor
File Size: 474.08 KB
Datasheet: HM2N15R-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

HM2N15R Distributors

📁 Related Datasheet

HM2007 HM200WD1-100 HM20N120AB HM20N120T HM20N120TB HM20N50F

📌 All Tags

HM2N15R N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2N15R-like datasheet