HM2N15R

N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Part number:

HM2N15R

Manufacturer:

H&M Semiconductor

File Size:

474.08 KB

Description:

N-channel enhancement mode power mosfet.
N-Channel Enhancement Mode Power MOSFET Description The HM2N15R uses advanced trench technology and .
The HM2N15R uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch.

✔ HM2N15R Features

VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Excellent

✔ HM2N15R Application

General Features
VDS = 150V,ID = 2A RDS(ON) < 300mΩ @ VGS=10V (Typ:260mΩ)
High density cell design for

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HM2N15R N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

Datasheet Details

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Description:

✔ HM2N15R Features

✔ HM2N15R Application

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