HM2N10B

N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number:

HM2N10B

Manufacturer:

H&M Semiconductor

File Size:

285.62 KB

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Description:

N-channel enhancement mode power mosfet.
HM1% N-Channel Enhancement Mode Power MOSFET Description The HM1% uses advanced trench techno.
The HM1% uses advanced trench technology and design to provide excellent RDS(ON) with low gate ch.

✔ HM2N10B Features

VDS = 100V,ID = 2A RDS(ON)

✔ HM2N10B Application

General Features
VDS = 100V,ID = 2A RDS(ON)

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HM2N10B N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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