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HM2N20MR Datasheet - H&M Semiconductor

HM2N20MR - 200V N-Channel Enhancement Mode MOSFET

HM2N20MR Features

* VDS = 200V,ID =2A RDS(ON) < 1800mΩ @ VGS=10V (Typ:1400mΩ) High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Excellent package for good heat dissipation Application Power switching application Hard switched and high frequency circuits Uninterruptible power

HM2N20MR-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM2N20MR

Manufacturer:

H&M Semiconductor

File Size:

937.04 KB

Description:

200v n-channel enhancement mode mosfet.

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