Part number:
HM2N65PR
Manufacturer:
H&M Semiconductor
File Size:
0.96 MB
Description:
N-channel enhanced vdmosfet.
Datasheet Details
HM2N65PR the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and h
HM2N65PR Features
* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter
Datasheet Details
HM2N65PR
H&M Semiconductor
0.96 MB
N-channel enhanced vdmosfet.
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