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HM2N65PR Datasheet - H&M Semiconductor

HM2N65PR - N-channel Enhanced VDMOSFET

HM2N65PR the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and h

HM2N65PR Features

* l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 15nC) l Low Reverse transfer capacitances(Typical: 9pF) l 100% Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter

HM2N65PR-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM2N65PR

Manufacturer:

H&M Semiconductor

File Size:

0.96 MB

Description:

N-channel enhanced vdmosfet.

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