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HM2N65R N-channel Enhanced VDMOSFET

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Description

HM2N65R General .
HM2N65R the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve swit.

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Datasheet Specifications

Part number
HM2N65R
Manufacturer
H&M Semiconductor
File Size
936.72 KB
Datasheet
HM2N65R-HMSemiconductor.pdf
Description
N-channel Enhanced VDMOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute(Tc= 25℃ unless otherwise specified): Symbol Parameter VDSS ID IDMa1 VGS EAS a2 EAR a1 IAR a1 dv/dt a3 PD VESD(G-S) TJ,Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-

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