HM4487 Datasheet, Mosfet, H&M Semiconductor

HM4487 Features

• Mosfet
• VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
• Super high dense cell design
• Advanced trench process technology
• Reliable and rugged <

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Part number:

HM4487

Manufacturer:

H&M Semiconductor

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419.93kb

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📄 Datasheet

Description:

P-channel enhancement mode power mosfet. The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide var

HM4487 Application

• Applications It is ESD protested. D G General Features
• VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ)
• Super high

TAGS

HM4487

H&M Semiconductor

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