HM4887 Datasheet, Mosfet, H&M Semiconductor

HM4887 Features

• Mosfet
• VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) S1 S2 Schematic diagram
• Super high dense cell design
• Advanced trench process technology
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Part number:

HM4887

Manufacturer:

H&M Semiconductor

File Size:

505.22kb

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📄 Datasheet

Description:

Dual p-channel enhancement mode power mosfet. The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide var

HM4887 Application

• Applications It is ESD protested. D1 G1 G2 D2 General Features
• VDS =-100V,ID =-4.5A RDS(ON) <100mΩ @ VGS=-10V (Typ:85mΩ) S1 S2 Sche

TAGS

HM4887

H&M Semiconductor

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