HM4887 - Dual P-Channel Enhancement Mode Power MOSFET
HM4887 Features
* VDS =-100V,ID =-4.5A RDS(ON)
HM4887 Features
* VDS =-100V,ID =-4.5A RDS(ON)
Datasheet Details
HM4887
H&M Semiconductor
505.22 KB
Dual p-channel enhancement mode power mosfet.
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