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HM4887 Datasheet - H&M Semiconductor

HM4887, Dual P-Channel Enhancement Mode Power MOSFET

HM4887 Dual P-Channel Enhancement Mode Power MOSFET .
The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
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HM4887-HMSemiconductor.pdf

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Datasheet Details

Part number:

HM4887

Manufacturer:

H&M Semiconductor

File Size:

505.22 KB

Description:

Dual P-Channel Enhancement Mode Power MOSFET

Features

* VDS =-100V,ID =-4.5A RDS(ON)

HM4887 Distributors

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