Datasheet4U Logo Datasheet4U.com

HM4887 - Dual P-Channel Enhancement Mode Power MOSFET

Product Overview

📥 Download Datasheet

Datasheet preview – HM4887

Datasheet Details

Part number HM4887
Manufacturer H&M Semiconductor
File Size 505.22 KB
Description Dual P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM4887 Datasheet
Additional preview pages of the HM4887 datasheet.

Product details

Description

The HM4887 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

📁 Similar Datasheet

  • HM4884 - Dual N-Channel MOSFET (H&M semi)
  • HM4884A - Dual N-Channel MOSFET (H&M semi)
  • HM4885 - Dual P-Channel Enhancement Mode Power MOSFET (H&M semi)
  • HM4885A - Dual P-Channel Enhancement Mode Power MOSFET (H&M semi)
  • HM4886A - N-Channel Enhancement Mode Power MOSFET (H&M semi)
  • HM4886E - Dual N-Channel MOSFET (H&M semi)
  • HM4806 - Dual N-Channel MOSFET (H&M semi)
  • HM4828 - Dual N-Channel 60V MOSFET (VBsemi)
Other Datasheets by H&M Semiconductor
  • HM4803 - Dual P-Channel Enhancement Mode Power MOSFET
  • HM4805 - Dual P-Channel Enhancement Mode Power MOSFET
  • HM4805A - Dual P-Channel Enhancement Mode Power MOSFET
  • HM4805B - Dual P-Channel Enhancement Mode Power MOSFET
  • HM4806B - Dual N-Channel Enhancement Mode Power MOSFET
  • HM4806D - Dual N-Channel Enhancement Mode Power MOSFET
Published: |