HMS20N80T Datasheet - H&M Semiconductor

HMS20N80T 800V N-Channel Super Junction MOSFET

HMS20N80T Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 850 20 0.25 13.7 Unit V A Ω nC Application

Datasheet Details

HMS20N80T

H&M Semiconductor

417.77 KB

800v n-channel super junction mosfet.

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