HMS3N70 Datasheet - H&M Semiconductor

HMS3N70 - 700V N-Channel Super Junction MOSFET

HMS3N70 Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 3.0 1.5 9.3 Unit V A Ω nC Application

Datasheet Details

HMS3N70

H&M Semiconductor

357.91 KB

700v n-channel super junction mosfet.

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