HMS3N70 Datasheet - H&M Semiconductor

HMS3N70 700V N-Channel Super Junction MOSFET

HMS3N70 Features

* Very Low FOM (RDS(on) X Qg)

* Extremely low switching loss

* Excellent stability and uniformity

* 100% Avalanche Tested

* Built-in ESD Diode Key Parameters Parameter BVDSS @Tj,max ID RDS(on), max Qg, Typ Value 700 3.0 1.5 9.3 Unit V A Ω nC Application

Datasheet Details

HMS3N70

H&M Semiconductor

357.91 KB

700v n-channel super junction mosfet.

📁 Related Datasheet

HMS3N70F 700V N-Channel Super Junction MOSFET (H&M Semiconductor)

HMS3N70R2 700V N-Channel Super Junction MOSFET (H&M Semiconductor)

HMS30C7202 Highly-integrated MPU (ABOV)

HMS30C7202 32-bit ARM7TDMI RISC static CMOS CPU core (Hynix Semiconductor)

HMS30C7202 32-Bit Microprocessor (Hynix Semiconductor)

HMS30C7202 32-Bit MPU (MagnaChip Semiconductor)

HMS30C7202N 32-Bit MPU (MagnaChip Semiconductor)

HMS30C7210 ARM Based 32-Bit Microprocessor (ABOV)

TAGS

HMS3N70 Distributor