HM2301BKR P-Channel 20V (D-S) MOSFET

H&M Semiconductor

HM2301BKR Description

HM2301BKR P-Channel 20V (D-S) MOSFET GENERAL .
The HM2301BKR is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

HM2301BKR Features

* RDS(ON)= 0.48Ω @VGS=-4.5V
* RDS(ON)= 0.67Ω @VGS=-2.5V
* RDS(ON)= 0.95Ω @VGS=-1.8V
* RDS(ON)= 2.20Ω @VGS=-1.5V
* Super high density cell design for extremely low RDS(ON)
* Exceptional on-resistance and maximum DC current capability
* Capable doing Cu wire bonding

HM2301BKR Applications

* Power Management in Note book
* Portable Equipment

📥 Download Datasheet

HM2301BKR Datasheet Preview — Preview of HM2301BKR PDF

Datasheet Details

Part number: HM2301BKR
Manufacturer: H&M Semiconductor
File Size: 657.83 KB
Datasheet: HM2301BKR-HMSemiconductor.pdf
Description: P-Channel 20V (D-S) MOSFET

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P-Channel 20V D-S MOSFET H&M Semiconductor

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