HM2309A P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

HM2309A Description

HM2309A P-Channel Enhancement Mode Power MOSFET .
The HM2309A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .

HM2309A Features

* VDS =-60V,ID =-4A RDS(ON)

📥 Download Datasheet

HM2309A Datasheet Preview — Preview of HM2309A PDF

Datasheet Details

Part number: HM2309A
Manufacturer: H&M Semiconductor
File Size: 505.08 KB
Datasheet: HM2309A-HMSemiconductor.pdf
Description: P-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

HM2301 - Digital-output humidity and temperature sensor (Hanwei)
HM2302 - Digital temperature and humidity sensor (ETC)
HM2310 - N-Channel 60V MOSFET (VBsemi)
HM236WU1-100 - TFT LCD (BOE)
HM236WU1-300 - TFT LCD (BOE)
HM236WU1-400 - TFT LCD (BOE)
HM236WU3-100 - TFT LCD (BOE)
HM236WU3-110 - TFT LCD (BOE)

📌 All Tags

P-Channel Enhancement Mode Power MOSFET H&M Semiconductor

H&M Semiconductor HM2309A-like datasheet

HM2309APR - P-Channel Enhancement Mode Power MOSFET
HM2309 - P-Channel Enhancement Mode Power MOSFET
HM2309B - P-Channel Enhancement Mode Power MOSFET
HM2309C - P-Channel Enhancement Mode Power MOSFET
HM2309F - P-Channel Enhancement Mode Power MOSFET
HM2300 - N-Channel Enhancement Mode Power MOSFET