HM25N06D MOSFET

H&M Semiconductor

HM25N06D Description

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The HM25N06D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM25N06D Features

* VDS >60V,ID =25A RDS(ON) < 17mΩ @ VGS=10V （Typ:12.6mΩ）
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

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HM25N06D Datasheet Preview — Preview of HM25N06D PDF

Datasheet Details

Part number: HM25N06D
Manufacturer: H&M Semiconductor
File Size: 447.87 KB
Datasheet: HM25N06D-HMSemiconductor.pdf
Description: MOSFET

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