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HM3400DR N-Channel Enhancement Mode Power MOSFET

HM3400DR Description

HM3400DR N-Channel Enhancement Mode Power MOSFET .
The HM3400DR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.

HM3400DR Features

* VDS = 30V,ID = 8A RDS(ON) < 59mΩ @ VGS=2.5V RDS(ON) < 45mΩ @ VGS=4.5V RDS(ON) < 41mΩ @ VGS=10V D G S Schematic diagram
* High Power and current handing capability
* Lead free product is acquired

HM3400DR Applications

* Load switch
* Power management DFN2X2-6L bottom view Package Marking And Ordering Information Device Marking Device Device Package HM3400DR HM3400DR DFN2X2-6L Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter

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Datasheet Details

Part number
HM3400DR
Manufacturer
H&M Semiconductor
File Size
564.87 KB
Datasheet
HM3400DR-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET H&M Semiconductor
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