Datasheet4U Logo Datasheet4U.com

HM3N10PR N-Channel Enhancement Mode Power MOSFET

HM3N10PR Description

N-Channel Enhancement Mode Power MOSFET .
The HM3N10PR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

HM3N10PR Features

* VDS = 100V,ID = 3A RDS(ON)

📥 Download Datasheet

Preview of HM3N10PR PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HM3N10PR
Manufacturer
H&M Semiconductor
File Size
457.95 KB
Datasheet
HM3N10PR-HMSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

📁 Related Datasheet

  • HM3-6514-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM3-6514B-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM3-6514S-9 - 1024 x 4 CMOS RAM (Intersil Corporation)
  • HM3-65764 - High Speed CMOS SRAM (Matra Design Semiconductor)
  • HM3-65787 - High Speed CMOS SRAM (Matra Design Semiconductor)
  • HM3-65788 - High Speed CMOS SRAM (Matra Design Semiconductor)
  • HM3-65789 - High Speed CMOS SRAM (Matra Design Semiconductor)
  • HM3-7603 - (HM3-7602) 32 x 8 PROM (Harris)

📌 All Tags

H&M Semiconductor HM3N10PR-like datasheet