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HM8N02MR - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number: HM8N02MR
Manufacturer: H&M Semiconductor
File Size: 560.68 KB
Datasheet: HM8N02MR-HMSemiconductor.pdf
Description: N-Channel Enhancement Mode Power MOSFET

HM8N02MR Product details

Description

The HM8N02MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V..

Features

VDS = 20V,ID = 8.0A RDS(ON) < 18mΩ @ VGS=2.5V RDS(ON) < 12mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 8N02 Marking and pin assignment Application.
Battery protection.
Load switch.
Power management SOT-23/ top view Package Marking and Ordering Information Device Marking Device Device Package 8N02 HM8N02MR SOT-23-3L Reel Size Ø180mm Tape width 8 mm Quantity 3 0.

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📌 All Tags

N-Channel Enhancement Mode Power MOSFET H&M Semiconductor

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HM8N02MR Stock/Price