Datasheet Details
- Part number
- HMG75N65FT
- Manufacturer
- H&M Semiconductor
- File Size
- 657.23 KB
- Datasheet
- HMG75N65FT-HMSemiconductor.pdf
- Description
- 650V 75A Trench Field Stop IGBT
HMG75N65FT Description
HMG75N65FT 650V /75A Trench Field Stop IGBT .
HMG75N65FT Features
* High breakdown voltage up to 650V for improved reliability
* Trench-Stop Technology offering :
* High speed switching
* High ruggedness, temperature stable
* Short circuit withstand time
* 5s
* Low VCEsat
* Easy parallel switching capability due to positive tem
HMG75N65FT Applications
* Product HMG75N65FT
Package TO247
Packaging Tube
Maximum Ratings （Tj= 25℃ unless otherwise
specified）
VCE
650
V
IC
75
A
VCE(SAT= ) IC 75A
1.7
V
Parameter
Collector-Emitter Breakdown Voltage
DC collector current, limited by Tjmax TC = 25°C TC = 100°C Diode Forward current, limited by Tjma
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