Description
The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge..
Features
- Optimized body diode reverse recovery performance.
- Low on-resistance and low conduction losses.
- Small package.
- Ultra Low Gate Charge cause lower driving requirements.
- 100% Avalanche Tested.
- ROHS compliant
VDS RDS(ON)TYP ID
650 V
115 mΩ
2
A
Application.
- Power factor correction(PFC).
- Switched mode power supplies(SMPS).
- Uninterruptible Power Supply(UPS).
- LLC Half-bridge
Schematic diagram.
- Intrinsic fast-recovery body diode
Package Marking A.