HMS260N10 - N-Channel Super Trench II Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number: HMS260N10
Manufacturer: H&M Semiconductor
File Size: 760.03 KB
Datasheet: HMS260N10-HMSemiconductor.pdf
Description: N-Channel Super Trench II Power MOSFET

HMS260N10 Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.Application. DC/DC Converter. Ideal for high-frequency switching and synchronous rectification General.

Features

VDS =100V,ID =260A RDS(ON)=2.3mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.3mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS.

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N-Channel Super Trench Power MOSFET H&M Semiconductor

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